| PART |
Description |
Maker |
| NAND04GW3C2AN1E NAND04GA3C2A NAND04GA3C2AN1E NAND0 |
4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND04GX3C2A |
4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
|
http://
|
| NAND02GR3B2BZA1 NAND02GR4B2BZA6 NAND02GR3B2BZB1 NA |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，2112 Byte/1056字的页面.8V/3V，NAND闪存
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，2112 Byte/1056字的页面1.8V/3V，NAND闪存
|
意法半导
STMicroelectronics N.V.
|
| NAND02GW3B2BN1E NAND02GW3B2BN1F NAND02GW3B2BN6E NA |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
|
Numonyx B.V
|
| NAND01G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
| LC322260J LC322260T-70 LC322260T-80 LC322260J-70 |
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode / Byte Read/Write
CONNECTOR ACCESSORY
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Read/Write
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode Byte Read/Write
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| AT28C040 |
4M bit EEPROM with 256-Byte Page & Software Data Protection
|
Atmel
|
| NAND512W4A2CZA6F NAND512R3A2C NAND512R3A2CN6E NAND |
512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| HY27UF164G2B HY27UF084G2B |
4Gbit (512Mx8bit) NAND Flash
|
Hynix Semiconductor
|
| MSM511664C-60TS-K MSM511664C-70JS MSM511664C-80JS |
65,536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE (BYTE WRITE)
|
OKI electronic componets
|
